Ion Implantation Doping in SiC and its Device Applications

Nanocrystal formation in hexagonal SiC after Ge+ ion implantation.

High-resolution and analytical electron microscopy techniques are used to characterize Ge-implanted hexagonal SiC. After annealing the implanted samples at 1200 degrees C, Ge is found to be located preferentially on interstitial sites. After annealing at 1600 degrees C, small nanocrystals of strained cubic and hexagonal (or faulted cubic) Ge and Ge Si form. Occasionally, hexagonal (or faulted c...

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Drawing graphene nanoribbons on SiC by ion implantation

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Doping of carbon nanotubes using low energy ion implantation.

Carbon nanotubes (CNTs) were implanted with thermally decomposed oxygen (O2+) and nitrogen (N2+) ions at an acceleration voltage of 20 V. With a low dose of oxygen ions, the CNT-FET exhibited p-type behaviors with substantial changes in threshold voltage and in the slope of the source-drain current (l(sd)). However, at high dosages, the device exhibited metallic behaviors. After nitrogen doping...

Te implantation in Ge(001) for n-type doping applications

5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...